Progress in GaN Performances and Reliability

Author

Saunier, P. ; Lee, C. ; Balistreri, A. ; Dumka, D. ; Jimenez, J. ; Tserng, H.Q. ; Kao, M.Y. ; Chao, P.C. ; Chu, K. ; Souzis, A. ; Eliashevich, I. ; Guo, S. ; del Alamo, J. ; Joh, J. ; Shur, M.

Author_Institution

TriQuint Semicond. Texas, Richardson

fYear

2007

fDate

18-20 June 2007

Firstpage

35

Lastpage

36

Abstract

With the DARPA Wide Bandgap Semiconductor Technology RF Thrust Contract, TriQuint Semiconductor and its partners, BAE Systems, Lockheed Martin, IQE-RF, II-VI, Nitronex, M.I.T., and R.P.I, are achieving great progress towards the overall goal of making gallium nitride a revolutionary RF technology ready to be inserted in defense and commercial applications. Performance and reliability are two critical components of success (along with cost and manufacturability). In this paper we will discuss these two aspects.

Keywords

III-V semiconductors; gallium compounds; semiconductor device reliability; semiconductor technology; wide band gap semiconductors; BAE Systems; DARPA Wide Bandgap Semiconductor Technology RF Thrust Contract; GaN; II-VI; IQE-RF; Lockheed Martin; M.I.T; Nitronex; R.P.I; TriQuint Semiconductor; commercial applications; defense applications; gallium nitride performance; reliability; Aluminum gallium nitride; Breakdown voltage; Buffer layers; Crystalline materials; Electrons; Gallium nitride; Lattices; Materials reliability; Radio frequency; Thermal conductivity; AlGaN/GaN; DARPA MTO; GaN; MMIC;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2007 65th Annual

Conference_Location

Notre Dame, IN

ISSN

1548-3770

Print_ISBN

978-1-4244-1101-6

Electronic_ISBN

1548-3770

Type

conf

DOI

10.1109/DRC.2007.4373639

Filename

4373639