• DocumentCode
    1958430
  • Title

    Power efficiency of silicon nanocrystal based LED in pulsed regime

  • Author

    Marconi, A. ; Tengattini, A. ; Anopchenko, A. ; Pavesi, L. ; Pucker, G.

  • Author_Institution
    Dept. of Phys., Univ. of Trento, Povo, Italy
  • fYear
    2011
  • fDate
    14-16 Sept. 2011
  • Firstpage
    266
  • Lastpage
    268
  • Abstract
    Power efficiency of silicon nanocrystal light-emitting devices is studied in pulsed regime. A phenomenological opto-electrical model is proposed to explain the frequency dependent electroluminescence which has been found.
  • Keywords
    electro-optical effects; electroluminescence; elemental semiconductors; light emitting devices; nanophotonics; nanostructured materials; silicon; LED; Si; frequency dependent electroluminescence; phenomenological optoelectrical model; power efficiency; silicon nanocrystal; Conductivity; Frequency measurement; Impedance; Light emitting diodes; Nanocrystals; Silicon; Opto-electrical model; Power Efficiency; Silicon Nanocrystals;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics (GFP), 2011 8th IEEE International Conference on
  • Conference_Location
    London
  • ISSN
    1949-2081
  • Print_ISBN
    978-1-4244-8338-9
  • Type

    conf

  • DOI
    10.1109/GROUP4.2011.6053785
  • Filename
    6053785
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1958430