Barrier layer downscaling of InAIN/GaN HEMTs

Author

Medjdoub, F. ; Carlin, J.-F. ; Gonschorek, M. ; Feltin, E. ; Py, M.A. ; Knez, M. ; Troadec, D. ; Gaquiere, C. ; Chuvilin, A. ; Kaiser, U. ; Grandjean, N. ; Kohn, E.

Author_Institution

Ulm Univ., Ulm

fYear

2007

fDate

18-20 June 2007

Firstpage

109

Lastpage

110

Abstract

In this study we have investigated heterojunctions on sapphire with barrier thicknesses between 13 nm and 5 nm maintaining a high output current. The results indicate that InAlN/GaN HEMT device structures can be reliably designed and fabricated with barrier layer thicknesses approaching the tunnelling thickness and approaching enhancement mode characteristics. Using Al₂O₃ as high-k gate dielectric also high aspect ratio MOSHEMTs could be designed with comparable characteristics to MESHEMTs of the same barrier thickness. This is an ongoing study and results on further barrier downscaling experiments will be presented.

Keywords

MOSFET; Schottky gate field effect transistors; aluminium compounds; gallium compounds; high electron mobility transistors; indium compounds; sapphire; semiconductor heterojunctions; tunnelling; wide band gap semiconductors; Al₂O₃; HEMT device structures; InAlN-GaN; MESHEMT; MOSHEMT; barrier layer downscaling; enhancement mode characteristics; heterojunctions; sapphire; size 5 nm to 13 nm; tunnelling thickness; Chemicals; Current density; Gallium nitride; Gold; HEMTs; Heterojunctions; MODFETs; Robust stability; Silicon compounds; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2007 65th Annual

Conference_Location

Notre Dame, IN

ISSN

1548-3770

Print_ISBN

978-1-4244-1101-6

Electronic_ISBN

1548-3770

Type

conf

DOI

10.1109/DRC.2007.4373673

Filename

4373673