DocumentCode
1958700
Title
Modification of second harmonic generation in silicon by strain and structuring
Author
Schriever, Clemens ; Bohley, Christian ; Naumann, Falk ; de Boor, Johannes ; Lange, Jens ; Schilling, Jörg
Author_Institution
Centre for Innovation Competence SiLi-nano, Martin-Luther-Univ. Halle-Wittenberg, Halle, Germany
fYear
2011
fDate
14-16 Sept. 2011
Firstpage
308
Lastpage
310
Abstract
The influence of strain and lateral structuring on the reflected second harmonic signal in silicon is investigated. The obtained second-harmonic enhancement could be used in silicon waveguides to create a localized second order nonlinear susceptibility.
Keywords
elemental semiconductors; optical harmonic generation; optical waveguides; silicon; Si; lateral structuring; second harmonic generation; second harmonic signal reflection; second order nonlinear susceptibility; silicon waveguides; strain; Gratings; Optical surface waves; Reflection; Silicon; Strain; Stress; Surface treatment;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics (GFP), 2011 8th IEEE International Conference on
Conference_Location
London
ISSN
1949-2081
Print_ISBN
978-1-4244-8338-9
Type
conf
DOI
10.1109/GROUP4.2011.6053799
Filename
6053799
Link To Document