• DocumentCode
    1958787
  • Title

    Epitaxy of Ge on offcut Si substrate for growth of In0.01Ga0.99As

  • Author

    Hu, Weixuan ; Cheng, Buwen ; Xue, Chunlai ; Su, Shaojian ; Liu, Zhi ; Li, Yaming ; Wang, Qiming

  • Author_Institution
    State Key Lab. on Integrated Optoelectron., Beijing, China
  • fYear
    2011
  • fDate
    14-16 Sept. 2011
  • Firstpage
    314
  • Lastpage
    316
  • Abstract
    Epitaxy of Ge on offcut Si (001) for growth of In0.01Ga0.99As was studied. Anti-phase domains were prevented in In0.01Ga0.99As layer except on the In0.01Ga0.99As/Ge interface. Threading dislocations of Ge deteriorate the quality of In0.01Ga0.99As remarkably.
  • Keywords
    III-V semiconductors; MOCVD; dislocations; gallium arsenide; germanium; indium compounds; semiconductor epitaxial layers; semiconductor growth; Ge epitaxy; In0.01Ga0.99As; Si-Ge; antiphase domains; offcut Si (001); offcut Si substrate; threading dislocations; Films; Gallium arsenide; Rough surfaces; Silicon; Substrates; Surface morphology; Surface roughness;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics (GFP), 2011 8th IEEE International Conference on
  • Conference_Location
    London
  • ISSN
    1949-2081
  • Print_ISBN
    978-1-4244-8338-9
  • Type

    conf

  • DOI
    10.1109/GROUP4.2011.6053801
  • Filename
    6053801
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1958787