• DocumentCode
    1958891
  • Title

    AlGaN/GaNHEMT with High PAE and Breakdown Voltage Grown by Ammonia MBE

  • Author

    Pei, Y. ; Suh, C. ; Chu, R. ; Recht, F. ; Shen, L. ; Corrion, A. ; Poblenz, C. ; Speck, J. ; Mishra, U.K.

  • Author_Institution
    California Univ., Santa Barbara
  • fYear
    2007
  • fDate
    18-20 June 2007
  • Firstpage
    129
  • Lastpage
    130
  • Abstract
    In this paper, a report on high PAE, high breakdown-voltage HEMTs grown by ammonia MBE is discussed. First, an AlN nucleation layer was grown by plasma-assisted MBE on SiC. Then GaN buffer was grown by ammonia MBE, followed by 30 nm ammonia Al0.3Ga0.7N. A sheet charge of 1x1013 cm-2 with a mobility of 1500 cm2V-1s-1 was obtained from Hall measurements.
  • Keywords
    Hall effect; III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; molecular beam epitaxial growth; nucleation; semiconductor growth; silicon compounds; wide band gap semiconductors; AIN nucleation layer; AlGaN-GaN; GaN buffer growth; Hall measurements; SiC; ammonia MBE; breakdown voltage HEMT; high electron mobility transistors; plasma-assisted MBE; power-added efficiency; Aluminum gallium nitride; Etching; Gallium nitride; Germanium; Gold; HEMTs; Lithography; Optical devices; Passivation; Plasma measurements;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2007 65th Annual
  • Conference_Location
    Notre Dame, IN
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4244-1101-6
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2007.4373683
  • Filename
    4373683
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1958891