• DocumentCode
    1959667
  • Title

    High-performance submicron inversion-type enhancement-mode InGaAs MOSFET with maximum drain current of 360 mA/mm and transconductance of 130 mS/mm

  • Author

    Xuan, Y. ; Wu, Y.Q. ; Lin, H.C. ; Shen, T. ; Ye, P.D.

  • Author_Institution
    Purdue Univ., West Lafayette
  • fYear
    2007
  • fDate
    18-20 June 2007
  • Firstpage
    207
  • Lastpage
    208
  • Abstract
    In this paper, we report, for the first time, submicron inversion-type E-mode n-channel MOSFETs on In0.53Ga0.47As using ALD AI2O3 as high-k gate dielectric with more than 360 mA/mm maximum drain current and 130 mS/mm transconductance. The device performance has a significant leap with 3000 times increase of the maximum drain current, compared to our previous results on In0.2Ga0.8As MOSFET.
  • Keywords
    III-V semiconductors; MOSFET; dielectric materials; gallium arsenide; indium compounds; Al2O3; In0.53Ga0.47As; drain current; high-k gate dielectric; n-channel MOSFET; submicron inversion-type enhancement-mode MOSFET; transconductance; Capacitance-voltage characteristics; Electronic mail; Gold; Hafnium; III-V semiconductor materials; Indium gallium arsenide; MOSFET circuits; Photonic band gap; Semiconductor device manufacture; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2007 65th Annual
  • Conference_Location
    Notre Dame, IN
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4244-1101-6
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2007.4373720
  • Filename
    4373720
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1959667