Performance of Sub-micron Gate Length InAlP Native Oxide GaAs-channel MOSFETs

GaAs based MOSFETs have attracted significant interest as a potential technology for both digital and RF applications. Among many candidate gate insulating materials, the native oxide of InAlP offers a low leakage current and modest interface state density while at the same time being simple to fabricate and offering a path to low-cost devices. Both enhancement-mode and depletion-mode MOSFETs with gate lengths > 1 mum have been demonstrated with InAlP native oxide gate dielectrics. We present here the first sub-micron gate length InAlP native oxide GaAs-channel devices, with record microwave performance.