High Performance Polycrystalline Diamond Micro Resonators

Author

Sepulveda, Nelson ; Lu, Jing ; Aslam, Dean M. ; Sullivan, J.P.

Author_Institution

Michigan State Univ., Lansing

fYear

2007

fDate

18-20 June 2007

Firstpage

255

Lastpage

256

Abstract

The highest Q factors for polycrystalline diamond resonators (also the highest Q factors for a cantilever beam made of any polycrystalline material) have been measured, whose undoped poly-C films grown at 780 degC. For boron doped poly-C films or poly-C films grown at a growth temperature of 600 degC, significantly lower Qs were observed. The doped poly-C film exhibited a peak in dissipation at 673 K, suggesting the existence of a dominant defect in these films that maybe related to boron doping. In addition, the temperature dependence of the poly-C resonators was examined, and a temperature coefficient of resonance frequency in the range of -1.59 x 10^-5 degC^-1 to -2.56 x 10^-5 degC^-1 was observed.

Keywords

diamond; micromechanical resonators; semiconductor doping; C:B; Q factors; boron doping; cantilever beam; dominant defect; poly-C resonators; polycrystalline diamond microresonators; polycrystalline material; temperature 600 C; temperature 673 K; temperature 780 C; Boron; Frequency measurement; Microcavities; Q factor; Q measurement; Resonance; Resonant frequency; Temperature dependence; Temperature distribution; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2007 65th Annual

Conference_Location

Notre Dame, IN

ISSN

1548-3770

Print_ISBN

978-1-4244-1101-6

Electronic_ISBN

1548-3770

Type

conf

DOI

10.1109/DRC.2007.4373742

Filename

4373742