EMC Analysis of High-Speed on-Chip Interconnects via a Mixed Quasi-Static Finite Difference - FEM Technique

We present a new technique to investigate EMC/EMI interactions in high speed transmission lines on the chip level. The time-domain method is based on the different nature of the problem in conductors and semiconductors, compared to the insulating media that separate them. Therefore, the static problem in the silicon oxide is separated from the diffusion problem in conductors. The latter one is solved by an efficient DuFort-Frankel technique, while the static problem is solved by a coarse FEM mesh. In each step, the two problems are appropriately coupled by means of proper interface conditions