DocumentCode
1963695
Title
Power Saturation Mechanisms in IMPATTS
Author
Blakey, P.A.
Author_Institution
Department of Electronic and Electrical Engineering, University College London.
fYear
1974
fDate
10-13 Sept. 1974
Firstpage
333
Lastpage
337
Abstract
A computer simulation of the operation of IMPATT diodes has been used to investigate the factors which limit the output power available from IMPATTS. Computed and experimental results are compared for existing silicon and gallium arsenide X-band structures: the degree of agreement obtained is taken as support for the diode model. The relative importance of various contributory saturation mechanisms are then isolated and discussed
Keywords
Circuit simulation; Current density; Diodes; Frequency; Gallium arsenide; Impedance; Power generation; Silicon; Temperature; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1974. 4th European
Conference_Location
Montreux, Switzerland
Type
conf
DOI
10.1109/EUMA.1974.332067
Filename
4130708
Link To Document