Electron beam resist preparation by plasma polymerization

Summary form only given. The use of plasma poly methyl methacrylate (PPMMA) as self-developable electron beam resist is reported. The PPMMA films are obtained in the tail flame of an inductively coupled reactor using Ar and O/sub 2/ as carrier gases. The plasma is sustained by applying RF field to the coil at 13.56 MHz. Doped PPMMA films are prepared using SF/sub 6/ as dopant gas with AR (AR-SF/sub 6/) to dope S and F atoms. Bonding characterization of the films deposited on Si substrate was done by IR spectroscopy.