A 144MHz integrated resonant regulating rectifier with hybrid pulse modulation

Author

Chul Kim ; Sohmyung Ha ; Jiwoong Park ; Akinin, Abraham ; Mercier, Patrick P. ; Cauwenberghs, Gert

Author_Institution

Univ. of California, San Diego, La Jolla, CA, USA

fYear

2015

fDate

17-19 June 2015

Abstract

This paper presents a CMOS fully-integrated resonant regulating rectifier (IR³) for inductive power telemetry in implantable devices. Employing PWM and PFM feedback, the IR³ achieves 1.87% of ΔV_DD/V_DD ratio despite a tenfold change in load with a 1nF decoupling capacitor. At 1V regulation of a 100μW load from a 144MHz RF input, the measured voltage conversion efficiency is greater than 92% at under 5.2mV_pp ripple and 54% power conversion efficiency. Implemented in 180nm SOI CMOS, the IR³ circuit occupies 0.078mm² active area.

Keywords

CMOS integrated circuits; PWM rectifiers; inductive power transmission; prosthetics; silicon-on-insulator; CMOS fully-integrated resonant regulating rectifier; PFM feedback; SOI CMOS; decoupling capacitor; frequency 144 MHz; hybrid pulse modulation; implantable devices; inductive power telemetry; integrated resonant regulating rectifier; power conversion efficiency; voltage conversion efficiency; Implants; Latches; Pulse width modulation; Radio frequency; Rectifiers; Voltage control; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Circuits (VLSI Circuits), 2015 Symposium on

Conference_Location

Kyoto

Print_ISBN

978-4-86348-502-0

Type

conf

DOI

10.1109/VLSIC.2015.7231292

Filename

7231292