MOVPE growth of high quality InGaN films and InGaN/GaN quantum wells

Author

Van Der Stricht, W. ; Moerman, I. ; Demeester, P. ; Thrush, E.J. ; Crawley, J.A.

Author_Institution

Dept. on Inf. Technol., Ghent Univ., Belgium

fYear

1997

fDate

11-13 Aug. 1997

Firstpage

27

Lastpage

28

Abstract

Recently the group III-nitrides (In,Ga)N have attracted much attention because of the high potential for the fabrication of light emitting devices operating in the red to ultraviolet wavelength range. Despite the recent success in realizing devices, only few reports have been made on growth of InGaN. In this paper growth of high quality InGaN films on (0001) sapphire substrates by atmospheric pressure organometallic vapor phase epitaxy in a close spaced vertical rotating disk reactor is investigated. The effect of the growth temperature, V/III ratio and rotation speed is investigated. Some early results on InGaN/GaN quantum well structures are also discussed.

Keywords

III-V semiconductors; gallium compounds; indium compounds; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; (0001) sapphire substrate; InGaN; InGaN film; InGaN-GaN; InGaN/GaN quantum well; MOVPE growth; atmospheric pressure organometallic vapor phase epitaxy; close spaced vertical rotating disk reactor; group III-nitride; Epitaxial growth; Epitaxial layers; Gallium nitride; Indium; Information technology; Photoluminescence; Quantum well devices; Rough surfaces; Surface roughness; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Vertical-Cavity Lasers, Technologies for a Global Information Infrastructure, WDM Components Technology, Advanced Semiconductor Lasers and Applications, Gallium Nitride Materials, Processing, and Devi

Conference_Location

Montreal, Que., Canada

Print_ISBN

0-7803-3891-X

Type

conf

DOI

10.1109/LEOSST.1997.619247

Filename

619247