• DocumentCode
    1965723
  • Title

    Development of Quantum Device Simulator, NEMO-VN2

  • Author

    Hien, Dinh Sy

  • Author_Institution
    Univ. of Natural Sci., Ho Chi Minh City, Vietnam
  • fYear
    2010
  • fDate
    13-15 Jan. 2010
  • Firstpage
    170
  • Lastpage
    173
  • Abstract
    We develop some versions of quantum devices simulators such as NEMO-VN, NEMO-VN1 and NEMO-VN2. The quantum device simulator - NEMO-VN2 focuses on carbon nanotube FET (CNTFET). CNTFETs have been studied in recent years as potential alternatives to CMOS devices because of their compelling properties. Studies of phonon scattering in CNTs and its influence in CNTFET have focused on metallic tubes or on long semiconducting tubes. Phonon scattering in short channel CNTFETs, which is important for nanoelectronic applications, remains unexplored. In this work the non-equilibrium Green function (NEGF) is used to perform a comprehensive study of CNT transistors. The program has been written by using graphic user interface (GUI) of Matlab. We find that the effect of scattering on current-voltage characteristics of CNTFET is significant. The degradation of drain current due to scattering has been observed. Some typical simulation results have been presented for illustration.
  • Keywords
    Green´s function methods; carbon nanotubes; electronic engineering computing; field effect transistors; graphical user interfaces; nanotube devices; Matlab; NEMO-VN1; NEMO-VN2; carbon nanotube FET; drain current; graphic user interface; non-equilibrium Green function; phonon scattering; quantum device simulator; CNTFETs; Current-voltage characteristics; Degradation; Graphical user interfaces; Graphics; Green function; Particle scattering; Phonons; Semiconductivity; User interfaces; coaxial CNTFET; phonon scattering; planar CNTFET; quantum device simulator;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Design, Test and Application, 2010. DELTA '10. Fifth IEEE International Symposium on
  • Conference_Location
    Ho Chi Minh City
  • Print_ISBN
    978-0-7695-3978-2
  • Electronic_ISBN
    978-1-4244-6026-7
  • Type

    conf

  • DOI
    10.1109/DELTA.2010.44
  • Filename
    5438693