Theory of gain in InGaN quantum well lasers

Author

Chow, W.W. ; Wright, A.F. ; Girndt, A. ; Jahnke, F. ; Koch, S.W.

Author_Institution

Sandia Nat. Labs., Albuquerque, NM, USA

fYear

1997

fDate

11-13 Aug. 1997

Firstpage

39

Lastpage

40

Abstract

To analyze experimental results in group-III nitride lasers, it is necessary to be able to predict their gain spectra accurately. Both excitons and electron hole plasma play important roles in the optical properties of group-III nitride compounds, even under typical lasing conditions of high carrier density and high temperature. Also, inhomogeneous broadening is present, due to localization effects from dimensional or compositional variations in the quantum wells. This paper describes a consistent treatment of the above effects.

Keywords

III-V semiconductors; excitons; gallium compounds; indium compounds; laser theory; quantum well lasers; semiconductor plasma; InGaN; InGaN quantum well laser; electron hole plasma; exciton; gain spectra; group-III nitride; inhomogeneous broadening; optical properties; Charge carrier density; Charge carrier processes; Electron optics; Excitons; Laser theory; Plasma density; Plasma properties; Plasma temperature; Quantum mechanics; Quantum well lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Vertical-Cavity Lasers, Technologies for a Global Information Infrastructure, WDM Components Technology, Advanced Semiconductor Lasers and Applications, Gallium Nitride Materials, Processing, and Devi

Conference_Location

Montreal, Que., Canada

Print_ISBN

0-7803-3891-X

Type

conf

DOI

10.1109/LEOSST.1997.619253

Filename

619253