• DocumentCode
    1966438
  • Title

    MOVPE Growth of Cubic GaN on GaAs Using Dimethylhydrazine

  • Author

    Miyoshi, S. ; Onabe, K. ; Ohkouchi, N. ; Yaguchi, H. ; Fukatsu, S. ; Shiraki, Y. ; Ito, R.

  • Author_Institution
    Department of Applied Physics, The University of Tokyo
  • fYear
    1992
  • fDate
    8-11 Jun 1992
  • Firstpage
    52
  • Lastpage
    53
  • Keywords
    Crystallization; Epitaxial growth; Epitaxial layers; Gallium arsenide; Gallium nitride; Molecular beam epitaxial growth; Raman scattering; Spectroscopy; Substrates; X-ray diffraction;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
  • Print_ISBN
    0-87942-652-7
  • Type

    conf

  • DOI
    10.1109/MOVPE.1992.664931
  • Filename
    664931
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1966438