• DocumentCode
    1967055
  • Title

    Minimum Resistance Microwave Diodes

  • Author

    Barrera, J.S. ; Curby, R.C. ; DeFevere, D.C. ; Kwan, F.S. ; Nevin, L.J. ; Solomon, R.

  • Author_Institution
    Hewlett-Packard Company, MSD, Palo Alto, CA 94304 USA
  • fYear
    1976
  • fDate
    14-17 Sept. 1976
  • Firstpage
    14
  • Lastpage
    18
  • Abstract
    Silicon PIN switching diodes and GaAs varactor tuning diodes have demonstrated 100% performance improvements in quality factor Q by using straightforward optimization techniques, device processing innovations and improvements in materials. Analogous design techniques have been applied to both devices, including careful modeling to identify series resistance contributions, and directed process development to reduce these contributions. In both cases, substrate resistance was reduced to a minimum with processes that replaced semiconductor substrate with metal. Total resistance was minimized by analytical calculation to define optimum device geometries.
  • Keywords
    Gallium arsenide; Geometry; Microwave devices; Q factor; Semiconductor diodes; Semiconductor materials; Silicon; Substrates; Technological innovation; Varactors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1976. 6th European
  • Conference_Location
    Rome, Italy
  • Type

    conf

  • DOI
    10.1109/EUMA.1976.332237
  • Filename
    4130903