DocumentCode
1967055
Title
Minimum Resistance Microwave Diodes
Author
Barrera, J.S. ; Curby, R.C. ; DeFevere, D.C. ; Kwan, F.S. ; Nevin, L.J. ; Solomon, R.
Author_Institution
Hewlett-Packard Company, MSD, Palo Alto, CA 94304 USA
fYear
1976
fDate
14-17 Sept. 1976
Firstpage
14
Lastpage
18
Abstract
Silicon PIN switching diodes and GaAs varactor tuning diodes have demonstrated 100% performance improvements in quality factor Q by using straightforward optimization techniques, device processing innovations and improvements in materials. Analogous design techniques have been applied to both devices, including careful modeling to identify series resistance contributions, and directed process development to reduce these contributions. In both cases, substrate resistance was reduced to a minimum with processes that replaced semiconductor substrate with metal. Total resistance was minimized by analytical calculation to define optimum device geometries.
Keywords
Gallium arsenide; Geometry; Microwave devices; Q factor; Semiconductor diodes; Semiconductor materials; Silicon; Substrates; Technological innovation; Varactors;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1976. 6th European
Conference_Location
Rome, Italy
Type
conf
DOI
10.1109/EUMA.1976.332237
Filename
4130903
Link To Document