DocumentCode
1968238
Title
Large Signal Effects in the Avalanche Region of High-Efficiency Impatt Diodes
Author
Blakey, P.A.
Author_Institution
Department of Electronic and Electrical Engineering, Unviersity College London, Torrington Place, London WClE 7 JE, England.
fYear
1976
fDate
14-17 Sept. 1976
Firstpage
331
Lastpage
335
Abstract
The avalanche regions of ´lo-hi-lo´ and ´hi-la´ IMPATTs are significantly different even though their drift regions may be similar. It is likely that this will cause differences in the large signal behaviour of the two structures. This possibility is investigated using computer simulation.
Keywords
Computer simulation; Current density; Diodes; Educational institutions; Frequency; Gallium arsenide; Power generation; Resonance; Temperature dependence; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1976. 6th European
Conference_Location
Rome, Italy
Type
conf
DOI
10.1109/EUMA.1976.332296
Filename
4130962
Link To Document