DocumentCode
1969050
Title
GaAs Power Mesfet Amplifier Design
Author
Angus, John A. ; Abbott, David A. ; Kelly, Edward
Author_Institution
Allen Clark Research Centre, The Plessey Company Limited, Caswell, Towcester, Northamptonshire, NN12 8EQ, England.
fYear
1976
fDate
14-17 Sept. 1976
Firstpage
611
Lastpage
615
Abstract
GaAs power MESFETs capable of producing in excess of 600 mW with 6 dB gain and 33% power added efficiency at 8 GHz have been produced. The use of these devices in amplifiers for S, C and X-bands will be described. Techniques for effective heat sinking whilst maintaining low parasitics will be discussed together with the characterisation of the devices, including a technique for measuring device ´S´ parameters under pulse bias conditions. Examples of amplifiers for the 2.7 GHz to 3.3 GHz band and the 5.0 GHz to 5.5 GHz band will be presented. A 9.5 GHz amplifier using one micron gate length power FETs will be described.
Keywords
Circuit testing; Fabrication; Gain; Gallium arsenide; Heat sinks; MESFETs; Packaging; Power amplifiers; Pulse amplifiers; Pulse measurements;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1976. 6th European
Conference_Location
Rome, Italy
Type
conf
DOI
10.1109/EUMA.1976.332346
Filename
4131012
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