• DocumentCode
    1969555
  • Title

    High-speed modulation in 1.3-µm InAs/GaAs high-density quantum dot lasers

  • Author

    Tanaka, Yu ; Takada, Kan ; Ishida, Mitsuru ; Nakata, Yoshiaki ; Yamamoto, Tsuyoshi ; Yamaguchi, Masaomi ; Nishi, Kenichi ; Sugawara, Mitsuru ; Arakawa, Yasuhiko

  • Author_Institution
    Fujitsu Labs. Ltd., Atsugi, Japan
  • fYear
    2010
  • fDate
    8-12 Dec. 2010
  • Firstpage
    577
  • Lastpage
    578
  • Abstract
    High-speed modulation characteristics of 1.3-μm InAs/GaAs high-density quantum-dot lasers are presented. The high-density quantum-dot active layers provided high net modal gain beyond 40cm-1. Fabricated Fabry-Perot lasers have exhibited an extended modulation bandwidth and 25-Gbps direct modulation, for the first time, in 1.3-μm quantum dot lasers.
  • Keywords
    Fabry-Perot resonators; III-V semiconductors; gallium arsenide; indium compounds; optical modulation; quantum dot lasers; Fabry-Perot lasers; InAs-GaAs; bit rate 25 Gbit/s; high-density quantum dot lasers; high-speed modulation; modal gain; wavelength 1.3 mum; Bandwidth; Gain; Gallium arsenide; Modulation; Quantum dot lasers; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Communications and Photonics Conference and Exhibition (ACP), 2010 Asia
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-7111-9
  • Type

    conf

  • DOI
    10.1109/ACP.2010.5682637
  • Filename
    5682637
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1969555