Electron distribution in bidimensional nonparabolic subbands under high-intensity excitation

Author

Vodopyanov, K.L. ; Serapiglia, G.B. ; Phillips, C.C. ; Sirtori, C.

Author_Institution

Dept. of Phys., Imperial Coll. of Sci., Technol. & Med., London, UK

fYear

1998

fDate

8-8 May 1998

Firstpage

192

Abstract

Summary form only given. Electron distribution among subbands in semiconductor quantum wells (QWs) has become of great interest since the demonstration of population inversion and lasing action in the quantum cascade laser. We applied two color mid-IR picosecond pump-probe spectroscopy for the study of electron dynamics in a QW three-level structure. Our samples, grown by molecular-beam epitaxy on a semi-insulating InP substrate, consist of 40 10-nm-thick GaInAs wells separated by 10 undoped AlInAs barriers.

Keywords

III-V semiconductors; electron mobility; gallium arsenide; high-speed optical techniques; indium compounds; infrared spectra; optical pumping; semiconductor quantum wells; 10 nm; AlInAs; GaInAs; GaInAs wells; InP; QW three-level structure; bidimensional nonparabolic subbands; electron distribution; electron dynamics; high-intensity excitation; lasing action; molecular-beam epitaxy; population inversion; quantum cascade laser; semi-insulating InP substrate; semiconductor quantum wells; two color mid-IR picosecond pump-probe spectroscopy; undoped AlInAs barriers; Absorption; Bleaching; Brillouin scattering; Electrons; Laser excitation; Optical pulse generation; Optical scattering; Quantum cascade lasers; Temperature; Tunable circuits and devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics Conference, 1998. IQEC 98. Technical Digest. Summaries of papers presented at the International

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-541-2

Type

conf

DOI

10.1109/IQEC.1998.680392

Filename

680392