DocumentCode
1970242
Title
Third order silicon (Si) nitride side-walled grating using silicon-on-insulator (SOI)
Author
Png, Ching Eng ; Lim, Sze Ter ; Li, E.P. ; Pan, L. ; Danner, Aaron J.
Author_Institution
Adv. Photonics & Plasmonics, A*Star, Singapore, Singapore
fYear
2010
fDate
8-12 Dec. 2010
Firstpage
653
Lastpage
654
Abstract
We demonstrate three-dimensional simulation of a third order silicon-based grating with full-width-half-maximum (FWHM) reflection bandwidth of 4nm. This provides more than 2 orders of magnitude improvement over a conventional side-walled grating structure. The relationship of grating performance over the infra-red wavelength range is also presented.
Keywords
Bragg gratings; integrated optics; silicon compounds; silicon-on-insulator; wide band gap semiconductors; Si; Si3N4; full-width-half-maximum reflection bandwidth; infrared wavelength range; silicon-on-insulator; third order silicon nitride side-walled grating; three-dimensional simulation; Bandwidth; Bragg gratings; Fabrication; Gratings; Reflection; Silicon; Silicon compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Communications and Photonics Conference and Exhibition (ACP), 2010 Asia
Conference_Location
Shanghai
Print_ISBN
978-1-4244-7111-9
Type
conf
DOI
10.1109/ACP.2010.5682673
Filename
5682673
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