DocumentCode
1971813
Title
Lasing characteristics of GaN-based photonic crystal surface-emitting lasers
Author
Chen, Shih-Wei ; Kao, Tsung-Ting ; Liu, Tzu-Wei ; Lu, Tien-Chang ; Kuo, Hao-Chung ; Wang, Shing-Chung
Author_Institution
Dept. of Photonics & Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear
2009
fDate
30-3 Aug. 2009
Firstpage
1
Lastpage
2
Abstract
We successfully demonstrated and analyzed the characteristics of GaN-based photonic-crystal surface emitting lasers at room temperature at different band edges (Gamma, K, and M), showing specific thresholds and polarization angles.
Keywords
III-V semiconductors; gallium compounds; photonic crystals; surface emitting lasers; wide band gap semiconductors; GaN; photonic crystal surface-emitting lasers; Laser feedback; Lasers and electrooptics; Optical pumping; Optical surface waves; Personal communication networks; Photonic crystals; Pump lasers; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers; Photonic crystal; lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics, 2009. CLEO/PACIFIC RIM '09. Conference on
Conference_Location
Shanghai
Print_ISBN
978-1-4244-3829-7
Electronic_ISBN
978-1-4244-3830-3
Type
conf
DOI
10.1109/CLEOPR.2009.5292214
Filename
5292214
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