Characterization of the Gate SiO2 /Channel-Si Interface in Thin-gate SiO2 MOSFETs by Low Frequency Noise and Charge Pumping Techniques

Author

Szewczyk, A. ; Ghibaudo, G. ; Ernst, T. ; Leroux, C. ; Chroboczek, J.A.

Author_Institution

Technical University of Gdansk, Poland

fYear

2001

fDate

11-13 September 2001

Firstpage

455

Lastpage

458

Keywords

Charge pumps; Low-frequency noise; MOSFETs;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2001. Proceeding of the 31st European

Print_ISBN

2-914601-01-8

Type

DOI

10.1109/ESSDERC.2001.195299

Filename

1506681

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