Relevance of non-exponential single-defect-induced threshold voltage shifts for NBTI variability

Author

Franco, Jacopo ; Kaczer, Ben ; Roussel, P.J. ; Toledano-Luque, Maria ; Weckx, Pieter ; Grasser, Tibor

Author_Institution

Imec, Leuven, Belgium

fYear

2013

fDate

13-17 Oct. 2013

Firstpage

69

Lastpage

72

Abstract

We report statistical NBTI datasets of nanoscale Si/SiON pMOSFETs. Weibull-distributed single-defect-induced ΔV_th are observed in the NBTI relaxation transients, in contrast with literature reports of exponential distribution. We discuss the (ir)relevance of a correct description of the single-defect-induced ΔV_th steps for describing the total BTI induced ΔV_th distribution. We show that the BTI induced V_th variance can be correctly predicted based on time-zero V_th0-variability only.

Keywords

MOSFET; Weibull distribution; elemental semiconductors; nanoelectronics; semiconductor device reliability; silicon; silicon compounds; NBTI relaxation transients; NBTI variability; Si-SiON; Weibull-distribution; nanoscale pMOSFETs; nonexponential single-defect-induced threshold voltage shifts; Convolution; Exponential distribution; MOSFET; Nanoscale devices; Silicon; Stress; Temperature measurement; NBTI; Variability; pMOSFETs;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report (IRW), 2013 IEEE International

Conference_Location

South Lake Tahoe, CA

ISSN

1930-8841

Print_ISBN

978-1-4799-0350-4

Type

conf

DOI

10.1109/IIRW.2013.6804161

Filename

6804161