Electric field dependent drain current drift of AlGaN/GaN HEMT

Author

Xinhua Wang ; Yuanqi Jiang ; Sen Huang ; Yingkui Zheng ; Ke Wei ; Xiaojuan Chen ; Weijun Luo ; Guoguo Liu ; Lei Pang ; Tingting Yuan ; Xinyu Liu

Author_Institution

Key Lab. of Microelectron. Device & Integrated Technol., Inst. of Microelectron., Beijing, China

fYear

2013

fDate

13-17 Oct. 2013

Firstpage

125

Lastpage

128

Abstract

We have performed constant voltage stress (CVS) tests on GaN-on-SiC HEMT to investigate the drain current drift. Two kinds of current drift behavior are observed in CVS. The off-state drain voltage step stress tests are carried out to confirm the electric field dependent current drift. A critical voltage for drain current recovery is observed. We suggest that the recovery of drain current is due to holes generation near the heterojunction interface or the detrapping of acceptors in the barrier layer. The drain current drift is balanced by the current degradation and recovery mechanism.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device breakdown; semiconductor device reliability; semiconductor device testing; silicon compounds; wide band gap semiconductors; AlGaN-GaN HEMT; AlGaN-GaN-SiC; GaN-on-SiC HEMT; SiC; acceptor detrapping; barrier layer; constant voltage stress tests; current degradation; drain current recovery; electric field dependent drain current drift; heterojunction interface; off-state drain voltage step stress tests; Aluminum gallium nitride; Degradation; Gallium nitride; HEMTs; Integrated circuit reliability; Stress; AlGaNIGaN HEMTs; drain current drift; impact ionization; reliability;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report (IRW), 2013 IEEE International

Conference_Location

South Lake Tahoe, CA

ISSN

1930-8841

Print_ISBN

978-1-4799-0350-4

Type

conf

DOI

10.1109/IIRW.2013.6804175

Filename

6804175