Electromigration induced stress in open TSVs

Author

Zisser, W.H. ; Ceric, H. ; de Orio, R.L. ; Selberherr, Siegfried

Author_Institution

Christian Doppler Lab. for Reliability Issues in Microelectron. at the Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria

fYear

2013

fDate

13-17 Oct. 2013

Firstpage

142

Lastpage

145

Abstract

A study of electromigration in open through silicon vias (TSVs) is presented. The calculations are based on the drift-diffusion model for electromigration combined with mechanical simulations. The results show that the highest stresses are located at the aluminium/tungsten interfaces, near the region where the electrical current is introduced into the TSV, which happens to be the location of the highest current density at the interface there, the electromigration induced degradation, e.g. void nucleation, is most probable to occur.

Keywords

aluminium; current density; diffusion; electromigration; three-dimensional integrated circuits; tungsten; Al-W; aluminium-tungsten interfaces; current density; drift-diffusion model; electrical current; electromigration induced degradation; electromigration induced stress; mechanical simulations; open TSVs; open through silicon vias; void nucleation; Aluminum; Current density; Electromigration; Materials; Stress; Through-silicon vias; Tungsten;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report (IRW), 2013 IEEE International

Conference_Location

South Lake Tahoe, CA

ISSN

1930-8841

Print_ISBN

978-1-4799-0350-4

Type

conf

DOI

10.1109/IIRW.2013.6804179

Filename

6804179