Electromigration enhanced growth of intermetallic compound in solder bumps

Author

Ceric, H. ; Singulani, A.P. ; de Orio, R.L. ; Selberherr, Siegfried

Author_Institution

Christian Doppler Lab. for Reliability Issues in Microelectron. at the Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria

fYear

2013

fDate

13-17 Oct. 2013

Firstpage

166

Lastpage

169

Abstract

Solder bumps are important interconnect components for three-dimensional (3D) integration. Their mechanical and electrical properties influence the overall reliability of 3D ICs. A particular characteristic of solder bumps is that during technology processing and usage their material composition changes. This compositional transformation influences the operation of 3D ICs and, in connection with electromigration, may cause failures. We present a model for describing the growth of intermetallic compound inside a solder bump under the influence of electromigration. Simulation results based on our model are discussed in conjunction with corresponding experimental findings.

Keywords

electromigration; integrated circuit interconnections; solders; three-dimensional integrated circuits; 3D ICs; compositional transformation; electromigration; interconnect components; intermetallic compound growth; solder bumps; three-dimensional integration; Chemicals; Electromigration; Nickel; Reliability; Resistance; Three-dimensional displays; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report (IRW), 2013 IEEE International

Conference_Location

South Lake Tahoe, CA

ISSN

1930-8841

Print_ISBN

978-1-4799-0350-4

Type

conf

DOI

10.1109/IIRW.2013.6804185

Filename

6804185