DocumentCode
1974147
Title
High Reliability Gallium Arsenide Schottky Diodes for Space Application
Author
Gibeau, P. ; Duchemin, J.P. ; Lacombe, J. ; Noger, J.
Author_Institution
THOMSON C S F - D.M.H. - Domaine de CORBEVILLE - 91401 ORSAY -(France)
fYear
1978
fDate
4-8 Sept. 1978
Firstpage
701
Lastpage
706
Abstract
We describe here the manufacturing process and the reliability tests adopted for gallium arsenide Schottky diodes designed for a space programm (TDRSS programm). Due to a new epitaxial process and a multilayer type contact, it has been possible to minimize the parasitic resistance and to obtain noise figures of 6.6 dB max. for wide band mixers operating in the range 14. 14.5 GHz, together with a high reliability level which has been demonstrated by the qualification tests.
Keywords
Conductivity; Epitaxial layers; Gallium arsenide; Hydrogen; Impurities; Nonhomogeneous media; Schottky diodes; Substrates; Tellurium; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1978. 8th European
Conference_Location
Paris, France
Type
conf
DOI
10.1109/EUMA.1978.332618
Filename
4131288
Link To Document