High-performance dual-channel InGaAs MOSFET for small signal RF applications

An indium gallium arsenide (InGaAs) dual-channel metal-oxide-semiconductor field-effect transistor (DCMOSFET) for high-frequency small signal applications is proposed. The gate electrode of the proposed device is placed in a trench to create two n-channels in the p-base. The simultaneous conduction of two channels provides significant improvement in all the performance parameters. Two-dimensional (2D) simulations are performed to evaluate and compare the performance of the DCMOSFET with that of the conventional MOSFET. At 60 nm gate length, the proposed device provides 92% higher drain current, nearly two times improvement in peak transconductance, 50% increase in cutoff frequency and 74% higher maximum frequency of oscillation with better control over the short channel effects as compared with the conventional device.