• DocumentCode
    1976569
  • Title

    OMVPE-Grown Pseudomorphic (AIxGa1-x)0.5ln0.5P/lnGaAs-MODFET Structures: Growth Procedure and Hall Properties

  • Author

    Bachem, K.H. ; Fekete, D. ; Pletschen, W. ; Winkler, K.

  • Author_Institution
    Fraunhofer Inst. of Applied Solid State Physics, Germany
  • fYear
    1992
  • fDate
    8-11 Jun 1992
  • Firstpage
    149
  • Lastpage
    150
  • Keywords
    Artificial intelligence; Doping; Electron mobility; Gallium arsenide; Hall effect; Indium gallium arsenide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
  • Print_ISBN
    0-87942-652-7
  • Type

    conf

  • DOI
    10.1109/MOVPE.1992.664988
  • Filename
    664988
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1976569