Microcontrollers with ferroelectric embedded memory

Author

De Araujo, C. A Paz ; Otsuki, T. ; Cuchiaro, J. ; McMillan, L.D.

Author_Institution

Symetrix Corp., Colorado Springs, CO, USA

fYear

1998

fDate

22-24 Jun 1998

Firstpage

27

Abstract

Summary form only given. This paper describes ferroelectric memories (FRAMs) embedded in microcontrollers. The first device to be commercialized by Panasonic/Symetrix is an 8-bit RISC processor with 64 kbits of FRAM, using the layered Perovskite Y-1 material. This FRAM is implemented using double level metal. An RF-coupled smart card uses this device on a single chip realization of a transponder, power circuit, microcontroller and memory. Further developments are also discussed for higher density devices and controllers of up to 32-bit words

Keywords

driver circuits; ferroelectric storage; integrated circuit design; integrated circuit interconnections; integrated circuit metallisation; microcontrollers; random-access storage; reduced instruction set computing; smart cards; storage management chips; transponders; 32 bit; 64 kbit; 8 bit; FRAMs; RF-coupled smart card; RISC processor; device density; double level metal FRAM; ferroelectric embedded memory; ferroelectric memories; layered Perovskite Y-1 material; microcontrollers; single chip transponder/power circuit/microcontroller/memory; word length; Circuits; Commercialization; Ferroelectric films; Ferroelectric materials; Microcontrollers; Nonvolatile memory; Random access memory; Reduced instruction set computing; Smart cards; Transponders;

fLanguage

English

Publisher

ieee

Conference_Titel

Nonvolatile Memory Technology Conference, 1998. 1998 Proceedings. Seventh Biennial IEEE

Conference_Location

Albuquerque, NM

Print_ISBN

0-7803-4518-5

Type

conf

DOI

10.1109/NVMT.1998.723212

Filename

723212