DocumentCode
1978049
Title
Ge DX Center in AlGaAs Grown by Organometallic Vapor Phase Epitaxy
Author
Lee, Wei-I ; Hummel, Steve ; Dapkus, P.Daniel
Author_Institution
National Chiao Tung University, Department of Electrophysics, Taiwan
fYear
1992
fDate
8-11 Jun 1992
Firstpage
162
Lastpage
163
Keywords
Atmospheric measurements; Building materials; Conducting materials; Epitaxial growth; Gettering; Inductors; Molecular beam epitaxial growth; Photonic band gap; Pollution measurement; Pressure measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN
0-87942-652-7
Type
conf
DOI
10.1109/MOVPE.1992.664995
Filename
664995
Link To Document