DocumentCode
1978062
Title
Simulation of Carbon Doping of GaAs During MOVPE
Author
Masi, Maurizio ; Jensen, Klavs F. ; Kuech, Thomas F. ; Potemski, Robert
Author_Institution
Department of Chemical Engineering, University of Winsconsin
fYear
1992
fDate
8-11 Jun 1992
Firstpage
164
Lastpage
165
Keywords
Carbon; Chemical engineering; Chemical technology; Doping; Epitaxial growth; Epitaxial layers; Gallium arsenide; Inductors; Predictive models; Semiconductor process modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN
0-87942-652-7
Type
conf
DOI
10.1109/MOVPE.1992.664996
Filename
664996
Link To Document