Origins of the short channel effects increase in III-V nMOSFET technologies

Author

Dutta, T. ; Rafhay, Q. ; Clerc, R. ; Lacord, J. ; Monfray, S. ; Pananakakis, G. ; Boeuf, F. ; Ghibaudo, G.

Author_Institution

IMEP-LAHC, Grenoble, France

fYear

2012

fDate

6-7 March 2012

Firstpage

25

Lastpage

28

Abstract

This paper investigates the different mechanisms responsible for the increase of short channel effects in III-V MOSFETs. As expected, the first origin of this increase is due to the higher dielectric constant of III-V semiconductors. The second is due to their small density of states, which induces larger DIBL, but only in the strong inversion regime, due to larger dark space. Finally, barrier layers, used in the Quantum Well FET architecture, are shown to cause additional DIBL increase.

Keywords

III-V semiconductors; MOSFET; permittivity; quantum well devices; semiconductor quantum wells; DIBL; III-V nMOSFET technology; III-V semiconductor; barrier layer; dielectric constant; quantum well FET architecture; short channel effect; state density; Dielectric constant; Effective mass; Logic gates; MOSFETs; Potential well; Silicon; Dark Space; III-V MOSFETs; QWFET architectures; Short Channel Effects; Strong inversion DIBL;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on

Conference_Location

Grenoble

Print_ISBN

978-1-4673-0191-6

Electronic_ISBN

978-1-4673-0190-9

Type

conf

DOI

10.1109/ULIS.2012.6193348

Filename

6193348