• DocumentCode
    1978334
  • Title

    Atomic Layer Epitaxy of CdTe on GaAs by Organometallic Vapor Phase Epitaxy

  • Author

    Wang, W.S. ; Ehsani, H.E. ; Bhat, I.B.

  • Author_Institution
    Electrical, Computer and Systems Engineering Department, Rensselaer Polytechnic Institute, NY
  • fYear
    1992
  • fDate
    8-11 Jun 1992
  • Firstpage
    183
  • Lastpage
    183
  • Keywords
    Atomic layer deposition; Epitaxial growth; Gallium arsenide; Inductors; Lattices; Substrates; Surface morphology; Systems engineering and theory; Tellurium; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
  • Print_ISBN
    0-87942-652-7
  • Type

    conf

  • DOI
    10.1109/MOVPE.1992.665008
  • Filename
    665008
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1978334