DocumentCode
1978908
Title
0.07 um InP HEMT MMIC Technology for G-band Power Amplifiers
Author
Lai, R. ; Huang, P. ; Grundbacher, R. ; Farkas, D. ; Cavus, A. ; Liu, P.H. ; Chin, P. ; Chou, Y.C. ; Barsky, M. ; Tsai, R. ; Raja, R. ; Oki, A.
fYear
2006
fDate
7-11 May 2006
Firstpage
39
Lastpage
41
Keywords
Breakdown voltage; Electron mobility; Frequency; HEMTs; Indium phosphide; Intrusion detection; MMICs; Power amplifiers; Power generation; Space technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Print_ISBN
0-7803-9558-1
Type
conf
DOI
10.1109/ICIPRM.2006.1634106
Filename
1634106
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