DocumentCode
1980051
Title
Advances in Microwave GaAs Power FET Device and Circuit Technologies
Author
Tserng, Hua Quen
Author_Institution
Central Research Laboratories, Texas Instruments Incorporated, Dallas, Texas, USA.
fYear
1981
fDate
7-11 Sept. 1981
Firstpage
48
Lastpage
58
Abstract
The latest advances in microwave GaAs power FET device and circuit technologies are discussed. Optimum device structures and design parameters for operating frequencies up to K-band are covered. Broadband matching networks for hybrid power GaAs FET amplifiers are described. These matching networks were obtained with CAD technique, using FET equivalent circuit models deduced from S-parameter characterization and modified for large-signal operation. Progress in the design and performance of monolithic power FET amplifiers is also presented.
Keywords
Broadband amplifiers; Design automation; Frequency; Gallium arsenide; K-band; Microwave FETs; Microwave circuits; Microwave devices; Microwave technology; Power amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1981. 11th European
Conference_Location
Amsterdam, Netherlands
Type
conf
DOI
10.1109/EUMA.1981.332984
Filename
4131592
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