DocumentCode
1980064
Title
Linear spectral features of radiatively coupled excitons in InGaAs quantum well structures
Author
Prineas, John P. ; Lee, E.S. ; Ell, C. ; Gibbs, H.M. ; Khitrova, G.
Author_Institution
Opt. Sci. Center, Arizona Univ., Tucson, AZ, USA
fYear
1998
fDate
8-8 May 1998
Firstpage
213
Abstract
Summary form only given. We report experimental observation of a giant enhancement in amplitude and broadening of the reflection spectrum of 30 In/sub 0.04/Ga/sub 0.96/As QWs with Bragg spacing. We note that the linewidth of the R(E) is dramatically broader at the Bragg resonance than off resonance.
Keywords
III-V semiconductors; excitons; gallium arsenide; indium compounds; semiconductor quantum wells; spectral line broadening; Bragg resonance; Bragg spacing; In/sub 0.04/Ga/sub 0.96/As; In/sub 0.04/Ga/sub 0.96/As QWs; InGaAs quantum well structures; giant enhancement; linear spectral features; off resonance; radiatively coupled excitons; reflection spectrum; spectral line broadening; Delay; Electromagnetic coupling; Excitons; Indium gallium arsenide; Nonlinear optics; Optical reflection; Polarization; Resonance; Stationary state; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics Conference, 1998. IQEC 98. Technical Digest. Summaries of papers presented at the International
Conference_Location
San Francisco, CA, USA
Print_ISBN
1-55752-541-2
Type
conf
DOI
10.1109/IQEC.1998.680452
Filename
680452
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