A −131-dBc/Hz, 20-MHz MEMS oscillator with a 6.9-mW, 69-kΩ, gain-tunable CMOS TIA

Author

Seth, Siddharth ; Wang, Shasha ; Kenny, Thomas ; Murmann, Boris

Author_Institution

Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA

fYear

2012

fDate

17-21 Sept. 2012

Firstpage

249

Lastpage

252

Abstract

We present the analysis, design, and measurement results of a low-noise, low-power MEMS oscillator at 20 MHz. The oscillator consists of a high-Q differential resonator, which is wire-bonded to a high-gain CMOS transimpedance amplifier (TIA). Measurement results show that the TIA achieves a tunable gain from 12 kΩ to 69 kΩ. The phase noise floor of the oscillator´s output voltage is at -131 dBc/Hz, while the differential peak-to-peak swing can be varied between 160 mV and 1700 mV by an on-chip automatic level control (ALC) loop. The TIA, fabricated in a 0.35-μm CMOS process, occupies an area of 0.15 mm² and dissipates 6.9 mW from a 2.5 V supply.

Keywords

CMOS integrated circuits; micromechanical devices; operational amplifiers; oscillators; CMOS process; differential peak-to-peak swing; gain-tunable CMOS TIA; high-Q differential resonator; high-gain CMOS transimpedance amplifier; low-noise low-power MEMS oscillator; on-chip automatic level control loop; output voltage; phase noise floor; CMOS integrated circuits; Floors; Gain; Micromechanical devices; Phase noise;

fLanguage

English

Publisher

ieee

Conference_Titel

ESSCIRC (ESSCIRC), 2012 Proceedings of the

Conference_Location

Bordeaux

ISSN

1930-8833

Print_ISBN

978-1-4673-2212-6

Electronic_ISBN

1930-8833

Type

conf

DOI

10.1109/ESSCIRC.2012.6341332

Filename

6341332