Increase of parasitic resistance of p-MOSFETs due to nitrogen atoms incorporation into silicon substrate by N/sub 2/O-oxynitride gate dielectrics process

Author

Takayanagi-Takagi, M. ; Yoshimura, H. ; Toyoshima, Y.

Author_Institution

Electron Device Eng. Lab., Toshiba Corp., Yokohama, Japan

fYear

1997

fDate

10-10 Dec. 1997

Firstpage

235

Lastpage

238

Abstract

In this paper, we study the characteristics of MOSFETs with N/sub 2/O-oxynitride gate dielectrics, shallow junctions and TiSi/sub 2/ source/drain diffusions in order to investigate the overall impact of N/sub 2/O-oxynitride gate dielectrics on high performance CMOSFETs. It is demonstrated that, in addition to the mobility degradation, an increase of parasitic resistance in gate-overlapped source/drain region by the nitrogen donors contributes to the reduction of current drivability, especially in p-MOSFETs.

Keywords

MOSFET; carrier mobility; dielectric thin films; diffusion; nitrogen compounds; semiconductor device reliability; CMOSFETs; N/sub 2/O-Si; Si; current drivability; gate-overlapped source/drain region; mobility degradation; oxynitride gate dielectrics; p-MOSFETs; parasitic resistance; shallow junctions; source/drain diffusions; Boron; CMOS technology; CMOSFETs; Degradation; Dielectric substrates; MOSFET circuits; Nitrogen; Silicides; Silicon; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-4100-7

Type

conf

DOI

10.1109/IEDM.1997.650359

Filename

650359