Effect of Schottky layer thickness on DC, RE and noise of 70-nm gate length InP HEMTs

Author

Malmkvist, Mikael ; Borg, Malin ; Wang, Shumin ; Grahn, Jan

Author_Institution

Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Goteborg

fYear

0

fDate

0-0 0

Firstpage

329

Lastpage

331

Abstract

The Schottky layer thickness of 70-nm InP HEMTs has been studied with respect to DC, RF and noise performance. An optimum gate-to-channel distance between 13-14 nm was found. Biased at a drain-to-source voltage of 0.7 V, a 2times50 mum device exhibited an extrinsic transconductance, g_m, of 1.1 mS/mm. The maximum frequency of oscillation, f_max, and the transit frequency, f_T, were extracted to 200 GHz and 170 GHz, respectively. A 50 Omega noise temperature of 140 K was measured at room temperature

Keywords

Schottky barriers; electrical conductivity; high electron mobility transistors; indium compounds; semiconductor device noise; 0.7 V; 1.1 mS/mm; 13 to 14 nm; 140 K; 170 GHz; 200 GHz; 50 ohm; 70 nm; DC performance; InP; InP HEMT; RF performance; Schottky layer thickness; drain-source voltage; extrinsic transconductance; gate length; gate-channel distance; maximum frequency of oscillation; noise performance; noise temperature; transit frequency; Acoustical engineering; Etching; HEMTs; Indium phosphide; MODFETs; Noise measurement; Radio frequency; Schottky barriers; Transconductance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on

Conference_Location

Princeton, NJ

Print_ISBN

0-7803-9558-1

Type

conf

DOI

10.1109/ICIPRM.2006.1634182

Filename

1634182