Epitaxial ferromagnet-semiconductor heterostructures for electrical spin injection

Author

Ploog, K.H.

Author_Institution

Paul Drude Inst. for Solid State Electron., Germany

fYear

2003

fDate

23-25 June 2003

Firstpage

115

Lastpage

118

Abstract

In this paper, we review our recent achievements on growth, characterisation and spin transport in two different classes of FM/SC heterostructures, first Fe-on-GaAs and MnAs-on-GaAs, which represent metallic FM/SC systems, second (Ga,Mn)As-on-GaAs and (Ga,Mn)N-on-GaN, which represent semiconducting FM/SC systems.

Keywords

III-V semiconductors; ferromagnetic materials; gallium arsenide; gallium compounds; iron; magnetic epitaxial layers; manganese compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; spin polarised transport; wide band gap semiconductors; (Ga,Mn)As-GaAs heterostructures; (Ga,Mn)N-GaN heterostructures; Fe-GaAs; Fe-GaAs heterostructures; GaAsMnAs-GaAs; GaNMnN-GaAs; MnAs-GaAs; MnAs-GaAs heterostructures; electrical spin injection; epitaxial ferromagnet-semiconductor heterostructures; Gallium arsenide; Iron; Magnetic anisotropy; Magnetic films; Magnetic materials; Magnetic moments; Perpendicular magnetic anisotropy; Semiconductor materials; Spin polarized transport; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2003

Conference_Location

Salt Lake City, UT, USA

Print_ISBN

0-7803-7727-3

Type

conf

DOI

10.1109/DRC.2003.1226898

Filename

1226898