A New Concept for THz Frequency Multipliers; An operation based on quasi-ballistic electron transport and reflection in double-heterojunction structures

Author

Ong, Duu-Sheng ; Hartnagel, Hans L.

Author_Institution

Inst. for High Freq. Electron., Tech. Univ. Darmstadt, Darmstadt

fYear

2007

fDate

11-14 Dec. 2007

Firstpage

1

Lastpage

4

Abstract

We introduce a new concept for THz frequency multipliers based on the quasi-ballistic electron transport and reflection in a double-heterojunction structure. A self-consistent Monte Carlo model is used to demonstrate this concept in In_0.52Al_0.48As/In_0.53Ga_0.47As/In_0.52Al_0.4sAs heterostructures with well dimensions in the range of the electron ballistic transport length in In_0.53Ga_0.47As. Simulation results showed that the strong nonlinearity of this new device is able to produce the third harmonic of the current response at almost half of the amplitude of the fundamental at excitation frequencies between 50-250 GHz.

Keywords

Monte Carlo methods; ballistic transport; electron transport theory; frequency multipliers; Monte Carlo model; THz frequency multipliers; double-heterojunction structures; quasiballistic electron transport; Ballistic transport; Capacitance-voltage characteristics; Electrons; Frequency; Heterojunctions; Optical reflection; Photonic band gap; Schottky diodes; Semiconductor diodes; Varactors; Terahertz; ballistic transport; electron reflection; frequency multiplier; heterostructure;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2007. APMC 2007. Asia-Pacific

Conference_Location

Bangkok

Print_ISBN

978-1-4244-0748-4

Electronic_ISBN

978-1-4244-0749-1

Type

conf

DOI

10.1109/APMC.2007.4555038

Filename

4555038