• DocumentCode
    1981309
  • Title

    Carbon nanotube field-effect transistors-an example of an ultra-thin body Schottky barrier device

  • Author

    Appenzeller, J. ; Knoch, J. ; Avouris, P.

  • Author_Institution
    IBM T.J. Watson Res. Center, Yorktown Heights, NY, USA
  • fYear
    2003
  • fDate
    23-25 June 2003
  • Firstpage
    167
  • Lastpage
    170
  • Abstract
    We present experimental and simulation results on carbon nanotube field-effect transistors (CNFETs) and discuss their performance in the context of Schottky barriers in a strongly confined geometry. We focus in particular on the impact of the body thickness-the tube diameter-and explain why conventional output characteristics can be obtained in case of CNFETs.
  • Keywords
    Schottky barriers; carbon nanotubes; field effect transistors; nanotube devices; C; Schottky barrier device; carbon nanotube FET; carbon nanotube field-effect transistors; CNTFETs; Carbon nanotubes; Electric variables; Geometry; Hafnium oxide; MOSFETs; Schottky barriers; Semiconductivity; Silicon; Solid modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2003
  • Conference_Location
    Salt Lake City, UT, USA
  • Print_ISBN
    0-7803-7727-3
  • Type

    conf

  • DOI
    10.1109/DRC.2003.1226919
  • Filename
    1226919
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1981309