Performance of Electrodeposited Pt/InP Schottky Diode as a Hydrogen Sensing Head for InP-Based Wireless Sensor Chips

Author

Kimura, Takeshi ; Hasegawa, Hideki ; Sato, Taketomo ; Hashizume, Tamotsu

Author_Institution

Res. Center for Integrated Quantum Electron., Hokkaido Univ., Sapporo

fYear

0

fDate

0-0 0

Firstpage

442

Lastpage

445

Abstract

Hydrogen-sensing performances of Pt/InP Schottky diodes and MESFETs are evaluated from a viewpoint of constructing a nanometer-scale hydrogen sensor head of a future wireless hydrogen sensor chip. To realize large Schottky barrier heights (SBHs), Pt films were deposited by a pulsed in-situ electrochemical process. Upon exposure to hydrogen in air, the Pt/InP Schottky diode exhibited remarkably large increase of forward and reverse currents. The sensing mechanism is explained in terms of SBH changes caused by interface dipole formed at Pt/InP interface due to the adsorbed atomic hydrogen. Quantitative relationships between response magnitude and speed have been established. The Pt/InP MESFET also showed hydrogen induced current changes, and their magnitudes were much larger than those of the Schottky diode. Based on these, a novel structure of a nanometer-scale hexagonal hydrogen sensing head is proposed

Keywords

Schottky diodes; Schottky gate field effect transistors; electrochemical sensors; electrodeposition; hydrogen; indium compounds; platinum; H₂; InP-based wireless sensor chips; MESFET; Pt-InP; Pt/InP Schottky diode; Schottky barrier heights; electrochemical process; electrodeposition; hydrogen sensing; Electrochemical processes; Epitaxial layers; Hydrogen; Indium phosphide; MESFETs; Performance evaluation; Schottky barriers; Schottky diodes; Substrates; Wireless sensor networks;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on

Conference_Location

Princeton, NJ

Print_ISBN

0-7803-9558-1

Type

conf

DOI

10.1109/ICIPRM.2006.1634212

Filename

1634212