• DocumentCode
    1981402
  • Title

    Rejuvenator: A static wear leveling algorithm for NAND flash memory with minimized overhead

  • Author

    Murugan, Muthukumar ; Du, David H C

  • Author_Institution
    Univ. of Minnesota, Minneapolis, MN, USA
  • fYear
    2011
  • fDate
    23-27 May 2011
  • Firstpage
    1
  • Lastpage
    12
  • Abstract
    NAND flash memory is fast replacing traditional magnetic storage media due to its better performance and low power requirements. However the endurance of flash memory is still a critical issue in using it for large scale enterprise applications. Rethinking the basic design of NAND flash memory is essential to realize its maximum potential in large scale storage. NAND flash memory is organized as blocks and blocks in turn have pages. A block can be erased reliably only for a limited number of times and frequent block erase operations to a few blocks reduce the lifetime of the flash memory. Wear leveling helps to prevent the early wear out of blocks in the flash memory. In order to achieve efficient wear leveling, data is moved around throughout the flash memory. The existing wear leveling algorithms do not scale for large scale NAND flash based SSDs. In this paper we propose a static wear leveling algorithm, named as Rejuvenator, for large scale NAND flash memory. Rejuvenator is adaptive to the changes in workloads and minimizes the cost of expensive data migrations. Our evaluation of Rejuvenator is based on detailed simulations with large scale enterprise workloads and synthetic micro benchmarks.
  • Keywords
    NAND circuits; flash memories; magnetic storage; wear; NAND flash memory; Rejuvenator; SSD; magnetic storage media; solid-stae disk; static wear leveling algorithm; Algorithm design and analysis; Ash; Cleaning; Flash memory; Heuristic algorithms; Memory management; Random access memory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Mass Storage Systems and Technologies (MSST), 2011 IEEE 27th Symposium on
  • Conference_Location
    Denver, CO
  • ISSN
    2160-195X
  • Print_ISBN
    978-1-4577-0427-7
  • Electronic_ISBN
    2160-195X
  • Type

    conf

  • DOI
    10.1109/MSST.2011.5937225
  • Filename
    5937225