Performance evaluation of GaSb/AlGaAs based high electron mobility transistors

Author

Mohapatra, M. ; Mumtaz, A. ; Panda, A.K.

Author_Institution

ECE Dept., Siksha ´O´ Anusandhan Univ., Bhubaneswar, India

fYear

2011

fDate

14-15 Nov. 2011

Firstpage

249

Lastpage

252

Abstract

The high electron mobility transistor (HEMT) is promising device for high power and high frequency application due to narrow band gap. The GaSb/AlGaAs HEMT is designed and optimized. The influence of two dimensional electron gas and electric field on device structure parameter is obtained from the self consistent solution basing on theory of semiconductor energy band and quantum well The influence of the layer structure of the device on its performance is obtained from simulation using TCAD software. Combining with results of theory analysis and simulation results, the optimized structure of GaSb/AlGaAs HEMT is proposed. The simulation results show that the device with gate length of 0.1μm and gate width of 25nm has excellent I_d-V_ds and I_d-V_gs characteristics.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; high electron mobility transistors; technology CAD (electronics); GaSb-AlGaAs; TCAD software; device structure parameter; gate length; gate width; high electron mobility transistor; layer structure; quantum well; self consistent solution; semiconductor energy band; size 25 nm; two dimensional electron gas; AlGaAs; Antimonide; GaSb; Hemt;

fLanguage

English

Publisher

iet

Conference_Titel

Advances in Recent Technologies in Communication and Computing (ARTCom 2011), 3rd International Conference on

Conference_Location

Bangalore

Type

conf

DOI

10.1049/ic.2011.0091

Filename

6193580