• DocumentCode
    1981975
  • Title

    MOVPE Growth of Short-Period Superlattices of AIP-GaP and its Application for Light-Emitting Diodes

  • Author

    Morii, A. ; Okagawa, H. ; Hara, K. ; Yoshino, J. ; Kukimoto, H.

  • Author_Institution
    Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, Japan
  • fYear
    1992
  • fDate
    8-11 Jun 1992
  • Firstpage
    230
  • Lastpage
    231
  • Keywords
    Conducting materials; Epitaxial growth; Epitaxial layers; Laboratories; Light emitting diodes; Materials science and technology; Photoluminescence; Photonic band gap; Superlattices; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
  • Print_ISBN
    0-87942-652-7
  • Type

    conf

  • DOI
    10.1109/MOVPE.1992.665030
  • Filename
    665030
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1981975